Special construct for continuous non-uniform rx finfet standard cells

ABSTRACT

Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.

RELATED APPLICATION

The present application is a Divisional application of application Ser.No. 14/610,260, filed on Jan. 30, 2015, which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present disclosure relates to special constructs for FinFET standardcells. In particular, the present disclosure relates to specialconstructs for continuous non-uniform active region FinFET standardcells.

BACKGROUND

Various layouts for cell circuits have been developed for semiconductordevices with linear-shaped diffusion fins, i.e. FinFET devices. Anexemplary cell layout incorporating FinFETs is shown in FIG. 1. In thisfigure, the cell layout 101 includes diffusion regions 103 from which anumber of linear, parallel fins 105 protrude from the substrate andextend in the direction of the cell width. The diffusion regions 103 andfins 105 together form the active regions 107. The cell layout 101 alsoincludes a number of linear gate electrodes 109 that extend along thedirection of the cell height in a perpendicular direction to the fins105, and which wrap over the fins 105 and are electrically isolated fromthe fins by a gate oxide material (not shown). Various contacts areoriented perpendicular to the fins 105 but parallel to the gateelectrodes 109, for example interconnect structures 111 for a sourcevoltage 113 and 115, which are part of the metal 1 (M1) layer. Inaddition, the gate electrodes 109 cross-couple transistors formed fromthe upper and lower diffusion regions 103 through interconnectstructures 119 for the drain voltage, which are connected through vias117 to M1 layer segment 121. Two or more dummy gates 123 are formed atthe edges of the cell.

As shown in FIG. 2A, two or more standard cells can be abutted into asingle cell layout 201A in order to reduce the area of the layout andincrease the number of transistors for a FinFET device. The cell layout201A includes diffusion regions 103, fins 105, active regions 107, gateelectrodes 109, interconnect structures 111 for the source voltage,source voltage 113 and 115 (which are part of the M1 layer), vias 117,interconnect structures 119 for the drain voltage, M1 layer segment 121,and three dummy gates 123. The diffusion regions 103 from the two cellsmeet in the middle of a dummy gate 123. However, the different height ornumber of fins 105 between the two abutted cells provides a non-uniformactive region 107, resulting in a jog pattern in the active regions.

If the two diffusion regions are at different potentials, the jogpattern can be problematic due to leakage issues resulting in adiscontinuous potential across the active regions. To solve the leakageproblem, cell layout 201A has an active region cut 203 that separatesthe two cells over the dummy gate 123 where the two cells meet. Theactive region cut 203 causes a single diffusion break (SDB) 205.However, the contact region between the fins with the gate electrode isthen reduced since the active region is rounded after lithography.

Alternatively, two cells may be abutted with a double diffusion break(DDB) to avoid the jog in the active regions, as illustrated in FIG. 2B.The cell layout 201B includes diffusion regions 103, fins 105, activeregions 107, gate electrodes 109, interconnect structures 111 for thesource voltage 113 and 115 (which are part of the M1 layer), vias 117,interconnect structures 119 for the drain voltage, M1 layer segment 121,and dummy gates 123. However, the cell layout 201B includes two dummygates 123 with a DDB 207 therebetween where one cell abuts the other,and each diffusion region 103 goes to the edge of a dummy gate 123,thereby increasing the contact area. Although the DDB 207 avoids theleakage issues and the reduction in contact area after photolithography,the area is increased.

A need therefore exists for methodology enabling the production oflayouts with continuous non-uniform active regions for FinFET standardcells and the resulting devices.

SUMMARY

An aspect of the present disclosure relates to methods for abutting twocells with different sized active regions by forming continuous activeregions by matching source regions with source regions and drain regionswith drain regions and forming a poly-cut mask between the source anddrain regions on the dummy gate where the cells meet.

Another aspect relates to a device having two cells abutting each otherwith continuous active regions and a gate cut mask between source anddrain regions over the dummy gate where the cells meet.

Additional aspects and other features of the present disclosure will beset forth in the description which follows and in part will be apparentto those having ordinary skill in the art upon examination of thefollowing or may be learned from the practice of the present disclosure.The advantages of the present disclosure may be realized and obtained asparticularly pointed out in the appended claims.

According to the present disclosure, some technical effects may beachieved in part by a method including: abutting a first cell having afirst drain diffusion region and a first source diffusion region and asecond cell having a second drain diffusion region and a second sourcediffusion region, the first diffusion regions being smaller than thesecond diffusion regions, by: forming a dummy gate at a boundary betweenthe first and second cells; forming a continuous drain diffusion regionhaving an upper portion crossing the dummy gate and encompassing theentire first drain diffusion region and part of the second draindiffusion region and having a lower portion beginning over the dummygate and encompassing a remainder of the second drain diffusion region;forming a continuous source diffusion region having a lower portioncrossing the dummy gate and encompassing the entire first sourcediffusion region and part of the second source diffusion region andhaving an upper portion beginning over the dummy gate and encompassing aremainder of the second source diffusion region; and forming a poly-cutmask over the dummy gate between, but separated from, the continuousdrain diffusion region and the continuous source diffusion region.

Aspects of the present disclosure also include having the lower portionof the continuous drain diffusion region and the upper portion of thecontinuous source diffusion region begin at an edge of the dummy gateand across the dummy gate. Other aspects include forming a first set ofcontinuous fins across the upper portion of the continuous draindiffusion region, a second set of continuous fins across the lowerportion of the continuous source diffusion region, a third set of finsacross the lower portion of the continuous drain diffusion region, afourth set of fins across the upper portion of the continuous sourcediffusion region, wherein the third and fourth sets are cut at the edgeof the dummy gate. Still other aspects include forming a first gatecontact over the dummy gate connecting a first source power lineinterconnect from the first cell to a first source power lineinterconnect from the second cell and a second gate contact over thedummy gate connecting a second source power line interconnect from thefirst cell to a second source power line interconnect from the secondcell. Further aspects include having the lower portion of the continuousdrain diffusion region and the upper portion of the continuous sourcediffusion region begin in the middle of the dummy gate and continueacross the dummy gate. Still further aspects include forming a first setof continuous fins across the upper portion of the continuous draindiffusion region, a second set of continuous fins across the lowerportion of the continuous source diffusion region, a third set of finsacross the lower portion of the continuous drain diffusion region, afourth set of fins across the upper portion of the continuous sourcediffusion region, wherein the third and fourth sets are cut at themiddle of the dummy gate. Other aspects include forming a first gatecontact over the dummy gate connecting a first source power lineinterconnect from the first cell to a first source power lineinterconnect from the second cell and a second gate contact over thedummy gate connecting a second source power line interconnect from thefirst cell to a second source power line interconnect from the secondcell. Still other aspects include having the first cell and the secondcell at the same potential.

According to the present disclosure, some technical effects may beachieved in part by a device including: a first cell and a second celladjacent the first cell; a dummy gate at a boundary between the firstand second cells; a continuous drain diffusion region having an upperportion crossing the dummy gate and encompassing an entire draindiffusion region for the first cell and part of a drain diffusion regionfor the second cell and having a lower portion beginning over the dummygate and encompassing a remainder of a drain diffusion region for thesecond cell; a continuous source diffusion region having a lower portioncrossing the dummy gate and encompassing an entire source diffusionregion for the first cell and part of a source diffusion region for thesecond cell and having an upper portion beginning over the dummy gateand encompassing a remainder of the source diffusion region for thesecond cell; and a poly-cut mask over the dummy gate between, butseparated from, the continuous drain diffusion region and the continuoussource diffusion region.

Aspects of the present disclosure also include having the lower portionof the continuous drain diffusion region and the upper portion of thecontinuous source diffusion region begin at an edge of the dummy gateand across the dummy gate. Other aspects include having a first set ofcontinuous fins across the upper portion of the continuous draindiffusion region, a second set of continuous fins across the lowerportion of the continuous source diffusion region, a third set of finsacross the lower portion of the continuous drain diffusion region, afourth set of fins across the upper portion of the continuous sourcediffusion region, wherein the third and fourth sets are cut at the edgeof the dummy gate. Still other aspects include having a first gatecontact over the dummy gate connecting a first source power lineinterconnect from the first cell to a first source power lineinterconnect from the second cell and a second gate contact over thedummy gate connecting a second source power line interconnect from thefirst cell to a second source power line interconnect from the secondcell. Further aspects include having the lower portion of the continuousdrain diffusion region and the upper portion of the continuous sourcediffusion region begin in the middle of the dummy gate and continueacross the dummy gate. Still further aspects include having a first setof continuous fins across the upper portion of the continuous draindiffusion region, a second set of continuous fins across the lowerportion of the continuous source diffusion region, a third set of finsacross the lower portion of the continuous drain diffusion region, afourth set of fins across the upper portion of the continuous sourcediffusion region, wherein the third and fourth sets are cut at themiddle of the dummy gate. Other aspects include forming a first gatecontact over the dummy gate connecting a first source power lineinterconnect from the first cell to a first source power lineinterconnect from the second cell and a second gate contact over thedummy gate connecting a second source power line interconnect from thefirst cell to a second source power line interconnect from the secondcell. Still other aspects include having the first cell and the secondcell at the same potential.

According to the present disclosure, some technical effects may beachieved in part by a method including: abutting a first cell having afirst drain diffusion region and a first source diffusion region and asecond cell having a second drain diffusion region and a second sourcediffusion region, the first diffusion regions being smaller than thesecond diffusion regions, by: forming a first dummy gate at a boundarybetween the first and second cells; forming a second dummy gate at anopposite edge of the first cell and a third dummy gate at an oppositeedge of the second cell; forming a continuous drain diffusion regionhaving an upper portion over the second and third dummy gates andtherebetween, crossing the first dummy gate and encompassing the entirefirst drain diffusion region and part of the second drain diffusionregion, and having a lower portion beginning over the first dummy gateand encompassing a remainder of the second drain diffusion region;forming a continuous source diffusion region having a lower portion overthe second and third dummy gates and therebetween, crossing the firstdummy gate and encompassing the entire first source diffusion region andpart of the second source diffusion region, and having an upper portionbeginning over the first dummy gate and encompassing a remainder of thesecond source diffusion region; and forming a poly-cut mask over thefirst dummy gate between, but separated from, the continuous draindiffusion region and the continuous source diffusion region.

Aspects of the present disclosure also include having the first cell andthe second cell at the same potential. Other aspects include having thelower portion of the continuous drain diffusion region and the upperportion of the continuous source diffusion region begin at an edge ofthe first dummy gate and across the first dummy gate, by: forming afirst set of continuous fins across the upper portion of the continuousdrain diffusion region, a second set of continuous fins across the lowerportion of the continuous source diffusion region, a third set of finsacross the lower portion of the continuous drain diffusion region, and afourth set of fins across the upper portion of the continuous sourcediffusion region, wherein the third and fourth sets are cut at the edgeof the first dummy gate; and forming a first gate contact over the firstdummy gate connecting a first source power line interconnect from thefirst cell to a first source power line interconnect from the secondcell and a second gate contact over the first dummy gate connecting asecond source power line interconnect from the first cell to a secondsource power line interconnect from the second cell. Still other aspectsinclude having the lower portion of the continuous drain diffusionregion and the upper portion of the continuous source diffusion regionbegin in the middle of the first dummy gate and continue across thefirst dummy gate, by: forming a first set of continuous fins across theupper portion of the continuous drain diffusion region, a second set ofcontinuous fins across the lower portion of the continuous sourcediffusion region, a third set of fins across the lower portion of thecontinuous drain diffusion region, and a fourth set of fins across theupper portion of the continuous source diffusion region, wherein thethird and fourth sets are cut at the middle of the first dummy gate; andforming a first gate contact over the first dummy gate connecting afirst source power line interconnect from the first cell to a firstsource power line interconnect from the second cell and a second gatecontact over the first dummy gate connecting a second source power lineinterconnect from the first cell to a second source power lineinterconnect from the second cell.

Additional aspects and technical effects of the present disclosure willbecome readily apparent to those skilled in the art from the followingdetailed description wherein embodiments of the present disclosure aredescribed simply by way of illustration of the best mode contemplated tocarry out the present disclosure. As will be realized, the presentdisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects, all without departing from the present disclosure.Accordingly, the drawings and description are to be regarded asillustrative in nature, and not as restrictive.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawing and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 illustrates a top-view of a standard cell layout for aconventional FinFET device;

FIG. 2A illustrates a top-view of a standard abutted cell layout with asingle diffusion break for a conventional FinFET device;

FIG. 2B illustrates a top-view of a standard abutted cell layout with adouble diffusion break for a conventional FinFET device;

FIG. 3A and 3B illustrate top-views of abutted standard cell layoutswith a continuous non-uniform active region according to exemplaryembodiments; and

FIG. 4A and 4B illustrate top-views of layouts for joined cells fordouble diffusion and single diffusion, respectively, according toanother exemplary embodiment.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of exemplary embodiments. It should be apparent, however,that exemplary embodiments may be practiced without these specificdetails or with an equivalent arrangement. In other instances,well-known structures and devices are shown in block diagram form inorder to avoid unnecessarily obscuring exemplary embodiments. Inaddition, unless otherwise indicated, all numbers expressing quantities,ratios, and numerical properties of ingredients, reaction conditions,and so forth used in the specification and claims are to be understoodas being modified in all instances by the term “about.”

The present disclosure addresses and solves the current problems ofleakage resulting in a discontinuous potential and reduced contact areasattendant upon abutting two cells with non-uniform active regions. Toreduce the cell layout and increase the number of transistors for aFinFET device while maintaining a continuous potential across the activeregions, a method in accordance with embodiments of the presentdisclosure includes abutting a first cell having a first drain diffusionregion and a first source diffusion region and a second cell having asecond drain diffusion region and a second source diffusion region, thefirst diffusion regions being smaller than the second diffusion regions,by: forming a dummy gate at a boundary between the first and secondcells; forming a continuous drain diffusion region having an upperportion crossing the dummy gate and encompassing the entire first draindiffusion region and part of the second drain diffusion region andhaving a lower portion beginning over the dummy gate and encompassing aremainder of the second drain diffusion region; forming a continuoussource diffusion region having a lower portion crossing the dummy gateand encompassing the entire first source diffusion region and part ofthe second source diffusion region and having an upper portion beginningover the dummy gate and encompassing a remainder of the second sourcediffusion region; and forming a poly-cut mask over the dummy gatebetween, but separated from, the continuous drain diffusion region andthe continuous source diffusion region.

Still other aspects, features, and technical effects will be readilyapparent to those skilled in this art from the following detaileddescription, wherein preferred embodiments are shown and described,simply by way of illustration of the best mode contemplated. Thedisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects. Accordingly, the drawings and description are to be regardedas illustrative in nature, and not as restrictive.

FIG. 3A illustrates a top-view of an abutted cell layout 301A with acontinuous and non-uniform active region according to an exemplaryembodiment. In this figure, a first cell 303 having a first sourcediffusion region and a first drain diffusion region is abutted to asecond cell 305 having a second source diffusion region and a seconddrain diffusion region. The first diffusion regions may be smaller thanthe second diffusion regions for example, there may be three fins 105present in the diffusion regions of the first cell 303, and four fins105 present in the diffusion regions of the second cell 305.

A first dummy gate 123 is located between the boundary of the first cell303 and the second cell 305. On each side of the first dummy gate 123are interconnect structures 111 for the source voltage 113 and 115,which are part of the M1 layer. Second and third dummy gates 123 formthe outer boundaries of the first and second cells, respectively. Thecell layout 301A also includes active regions 307 and 309, three gateelectrodes 109, vias 117, interconnect structures 119 for the drainvoltage, and M1 layer segment 121.

In cell layout 301A, the first cell 303 and second cell 305 are abuttedtogether to form a continuous drain diffusion region 307 having an upperportion and a lower portion that runs the entire width of the region andencompasses the entire drain diffusion region of the first cell 303. Thecontinuous drain diffusion region 307 also has a lower portion, whichbegins at an edge of the first dummy gate 123, crosses dummy gate 123,and continues across the width of the diffusion region of the secondcell 305. In addition, the first cell 303 and second cell 305 togetherform a continuous source diffusion region 309 having upper and lowerportions that mirror the lower and upper portions, respectively, ofdrain diffusion region 307. A poly-cut mask 311 cuts the first dummygate 123 between, but separated from, the continuous drain diffusionregion 307 and the continuous source diffusion region 309. The firstcell 303 and the second cell 305 are at the same potential.

The cell layout 301A further includes a first gate contact 313 acrossthe first dummy gate 123 that connects structure 111 from the first cell303 with structure 111 from the second cell, which in turn are connectedto power line 113 in the M1 layer. A second gate contact 315 crosses thefirst dummy gate 123 and connects other structures 111 from the firstand second cells, respectively, which in turn are connected to powerline 115 in the M1 layer. The first cell 303 and the second cell 305 areat the same potential.

FIG. 3B illustrates a top-view of an abutted cell layout 301B with acontinuous and non-uniform active region according to another exemplaryembodiment. In this figure, a first cell 303 having a first sourcediffusion region and a first drain diffusion region is abutted to asecond cell 305 having a second source diffusion region and a seconddrain diffusion region. A first dummy gate 123 is located between theboundary of the first cell 303 and the second cell 305. On one side ofthe first dummy gate 123 is an interconnect structure 111 for the sourcepower line 113 which is part of the M1 layer. The interconnect structure111 is connected to the middle of the dummy gate 123 by a first gatecontact 313. The second gate contact 315 connects the midline of thedummy gate 123 to another structure 111, which in turn is connected topower line 115, which is part of the M1 layer. On the other side of thefirst dummy gate 123 are the interconnect structures 119 for the drainvoltage. The first cell 303 and the second cell 305 are at the samepotential.

FIG. 4A illustrates a top-view of the abutted cell layout for doublediffusion with a continuous and non-uniform active region, according toan exemplary embodiment. In this figure, the active region of the secondcell 305 extends to the edge of the dummy gate 123, and the fins 105 arecut at the edge. The fin cut in FIG. 4A satisfies the design rule forfin cuts. A poly cut mask 311 cuts the dummy gate 123 between the sourceand drain regions.

FIG. 4B illustrates a top-view of an abutted cell layout for singlediffusion with a continuous and non-uniform active region according toan exemplary embodiment. In this figure, the active region is extendedto the middle of dummy gate 123 and the fins 105 are cut at the centerof the dummy gate 123. The jog in the active region violates the designrule for fin cuts, but leakage is not an issue since the two cells areat the same potential. Again, a poly-cut mask 311 cuts the dummy gate123 between the source and drain regions.

The embodiments of the present disclosure can achieve several technicaleffects, such as providing methods and devices for abutting two cellswith different sized diffusion regions without creating leakage issuesand without increasing the area of the cell layout, thereby increasingthe number of transistors for a FinFET device. Devices formed inaccordance with embodiments of the present disclosure are useful invarious industrial applications, e.g., microprocessors, smart phones,mobile phones, cellular handsets, set-top boxes, DVD recorders andplayers, automotive navigation, printers and peripherals, networking andtelecom equipment, gaming systems, and digital cameras. The presentdisclosure therefore has industrial applicability in any of varioustypes of highly integrated semiconductor devices.

In the preceding description, the present disclosure is described withreference to specifically exemplary embodiments thereof. It will,however, be evident that various modifications and changes may be madethereto without departing from the broader spirit and scope of thepresent disclosure, as set forth in the claims. The specification anddrawings are, accordingly, to be regarded as illustrative and not asrestrictive. It is understood that the present disclosure is capable ofusing various other combinations and embodiments and is capable of anychanges or modifications within the scope of the inventive concept asexpressed herein.

What is claimed is:
 1. A device, comprising: a first cell and a secondcell adjacent the first cell; a dummy gate at a boundary between thefirst and second cells; a continuous drain diffusion region having anupper portion crossing the dummy gate and encompassing an entire draindiffusion region for the first cell and part of a drain diffusion regionfor the second cell and having a lower portion beginning over the dummygate and encompassing a remainder of a drain diffusion region for thesecond cell; a continuous source diffusion region having a lower portioncrossing the dummy gate and encompassing an entire source diffusionregion for the first cell and part of a source diffusion region for thesecond cell and having an upper portion beginning over the dummy gateand encompassing a remainder of the source diffusion region for thesecond cell; and a poly-cut mask over the dummy gate between, butseparated from, the continuous drain diffusion region and the continuoussource diffusion region.
 2. The device according to claim 1, wherein thelower portion of the continuous drain diffusion region and the upperportion of the continuous source diffusion region begin at an edge ofthe dummy gate and across the dummy gate.
 3. The device according toclaim 2, further comprising: a first set of continuous fins across theupper portion of the continuous drain diffusion region; a second set ofcontinuous fins across the lower portion of the continuous sourcediffusion region, a third set of fins across the lower portion of thecontinuous drain diffusion region; and a fourth set of fins across theupper portion of the continuous source diffusion region.
 4. The deviceaccording to claim 3, wherein the third and fourth sets are cut at theedge of the dummy gate.
 5. The device according to claim 4, furthercomprising: a first gate contact over the dummy gate connecting a firstsource power line interconnect from the first cell to a first sourcepower line interconnect from the second cell; and a second gate contactover the dummy gate connecting a second source power line interconnectfrom the first cell to a second source power line interconnect from thesecond cell.
 6. The device according to claim 1, wherein the lowerportion of the continuous drain diffusion region and the upper portionof the continuous source diffusion region begin in the middle of thedummy gate and continue across the dummy gate.
 7. The device accordingto claim 6, further comprising: a first set of continuous fins acrossthe upper portion of the continuous drain diffusion region; a second setof continuous fins across the lower portion of the continuous sourcediffusion region; a third set of fins across the lower portion of thecontinuous drain diffusion region; and a fourth set of fins across theupper portion of the continuous source diffusion region.
 8. The deviceaccording to claim 7, wherein the third and fourth sets are cut at themiddle of the dummy gate.
 9. The device according to claim 8, furthercomprising: a first gate contact over the dummy gate connecting a firstsource power line interconnect from the first cell to a first sourcepower line interconnect from the second cell; and a second gate contactover the dummy gate connecting a second source power line interconnectfrom the first cell to a second source power line interconnect from thesecond cell.
 10. The device according to claim 1, wherein the first celland the second cell are at the same potential.
 11. A device comprising:a first cell having a first drain diffusion region and a first sourcediffusion region and a second cell having a second drain diffusionregion and a second source diffusion region, the first diffusion regionsbeing smaller than the second diffusion regions; a dummy gate at aboundary between the first and second cells; a continuous draindiffusion region having an upper portion crossing the dummy gate andencompassing the entire first drain diffusion region and part of thesecond drain diffusion region and having a lower portion beginning overthe dummy gate and encompassing a remainder of the second draindiffusion region; a continuous source diffusion region having a lowerportion crossing the dummy gate and encompassing the entire first sourcediffusion region and part of the second source diffusion region andhaving an upper portion beginning over the dummy gate and encompassing aremainder of the second source diffusion region; and a poly-cut maskover the dummy gate between, but separated from, the continuous draindiffusion region and the continuous source diffusion region.
 12. Thedevice according to claim 11, wherein: the lower portion of thecontinuous drain diffusion region and the upper portion of thecontinuous source diffusion region begin at an edge of the dummy gateand across the dummy gate, and the first cell and the second cell are atthe same potential.
 13. The device according to claim 12, furthercomprising: a first set of continuous fins across the upper portion ofthe continuous drain diffusion region; a second set of continuous finsacross the lower portion of the continuous source diffusion region; athird set of fins across the lower portion of the continuous draindiffusion region; and a fourth set of fins across the upper portion ofthe continuous source diffusion region.
 14. The device according toclaim 13, wherein the third and fourth sets are cut at the edge of thedummy gate.
 15. The device according to claim 14, further comprising: afirst gate contact over the dummy gate connecting a first source powerline interconnect from the first cell to a first source power lineinterconnect from the second cell; and a second gate contact over thedummy gate connecting a second source power line interconnect from thefirst cell to a second source power line interconnect from the secondcell.
 16. The device according to claim 11, wherein the lower portion ofthe continuous drain diffusion region and the upper portion of thecontinuous source diffusion region begin in the middle of the dummy gateand continue across the dummy gate.
 17. The device according to claim16, further comprising: a first set of continuous fins across the upperportion of the continuous drain diffusion region; a second set ofcontinuous fins across the lower portion of the continuous sourcediffusion region; a third set of fins across the lower portion of thecontinuous drain diffusion region; a fourth set of fins across the upperportion of the continuous source diffusion region.
 18. The deviceaccording to claim 17, wherein the third and fourth sets are cut at themiddle of the dummy gate.
 19. The device according to claim 18, furthercomprising: a first gate contact over the dummy gate connecting a firstsource power line interconnect from the first cell to a first sourcepower line interconnect from the second cell; and a second gate contactover the dummy gate connecting a second source power line interconnectfrom the first cell to a second source power line interconnect from thesecond cell.
 20. A device comprising: a first cell having a first draindiffusion region and a first source diffusion region and a second cellhaving a second drain diffusion region and a second source diffusionregion, the first diffusion regions being smaller than the seconddiffusion regions; a first dummy gate at a boundary between the firstand second cells; a second dummy gate at an opposite edge of the firstcell and a third dummy gate at an opposite edge of the second cell; acontinuous drain diffusion region having an upper portion over thesecond and third dummy gates and therebetween, crossing the first dummygate and encompassing the entire first drain diffusion region and partof the second drain diffusion region, and having a lower portionbeginning over the first dummy gate and encompassing a remainder of thesecond drain diffusion region; a continuous source diffusion regionhaving a lower portion over the second and third dummy gates andtherebetween, crossing the first dummy gate and encompassing the entirefirst source diffusion region and part of the second source diffusionregion, and having an upper portion beginning over the first dummy gateand encompassing a remainder of the second source diffusion region; anda poly-cut mask over the first dummy gate between, but separated from,the continuous drain diffusion region and the continuous sourcediffusion region, wherein the first cell and the second cell are at thesame potential, wherein the lower portion of the continuous draindiffusion region and the upper portion of the continuous sourcediffusion region begin at an edge of the first dummy gate and across thefirst dummy gate or in the middle of the first dummy gate and continueacross the first dummy gate.